Title of article
Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy
Author/Authors
Zhibin Huang، نويسنده , , Wancheng Zhou، نويسنده , , Xiufeng Tang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
6
From page
2025
To page
2030
Abstract
Platinum films were sputter-deposited on polished nickel alloy substrates. The platinum thin films were applied to serve as low-emissivity layers to reflect thermal radiation. The platinum-coated samples were then heated in the air at 600 °C to explore the effects of annealing time on the emissivity of platinum films. The results show that the grain size of the Pt films increased with the increasing annealing time while their dc electrical resistivity decreased. Besides, the IR emissivitiy of the films gradually decreased with the increasing annealing time. Especially, when the annealing time reached 150 h, the average IR emissivity at the wavelength of 3–14 μm was only about 0.1. Moreover, the chemical analysis indicated that the Pt films on Ni-based alloy exhibit a good resistance against oxidation at 600 °C.
Keywords
Platinum film , Annealing time , Sputter-deposited , Low-emissivity layer
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1011752
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