The positive charging effect of dielectric films irradiated by a focused electron beam

Space charge and surface potential profiles are investigated with numerical simulation for dielectric films of SiO2 positively charged by a focused electron beam. By combining the Monte Carlo method and the finite difference method, the simulation is preformed with a newly developed comprehensive two-dimensional model including electron scattering, charge transport and trapping. Results show that the space charge is distributed positively, like a semi-ellipsoid, within a high-density region of electrons and holes, but negatively outside the region due to electron diffusion along the radial and beam incident directions. Simultaneously, peak positions of the positive and negative space charge densities shift outwards or downwards with electron beam irradiation. The surface potential, along the radial direction, has a nearly flat-top around the center, abruptly decreases to negative values outside the high-density region and finally increases to zero gradually. Influences of electron beam and film parameters on the surface potential profile in the equilibrium state are also shown and analyzed. Furthermore, the variation of secondary electron signal of a large-scale integration sample positively charged in scanning electron microscopic observation is simulated and validated by experiment.