Title of article
Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects
Author/Authors
M. Yang، نويسنده , , W.S. Deng، نويسنده , , Q. Chen، نويسنده , , Y.P. Feng، نويسنده , , L.M. Wong، نويسنده , , J.W. Chai، نويسنده , , J.S. Pan، نويسنده , , S.J. Wang، نويسنده , , C.M. Ng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
4850
To page
4853
Abstract
High-image dielectrics SrZrO3 were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 imageC, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO3 became polycrystalline in the meantime.
Keywords
High-? , Ge-FETs , Gate dielectrics
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1012778
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