Title of article
Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy
Author/Authors
C.F. Cai، نويسنده , , H.Z. Wu، نويسنده , , J.X. Si، نويسنده , , W.H. Zhang، نويسنده , , Y. Xu، نويسنده , , J.F. Zhu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
3
From page
6057
To page
6059
Abstract
The band offset at the interface of PbTe/Ge (1 0 0) heterojunction was studied by the synchrotron radiation photoelectron spectroscopy. A valence band offset of ΔEV = 0.07 ± 0.05 eV, and a conduction band offset of ΔEC = 0.27 ± 0.05 eV are concluded. The experimental determination of the band offset for the PbTe/Ge interface should be beneficial for the heterojunction to be applied in new optoelectronic and electronic devices.
Keywords
SRPES , PbTe/Ge heterojunction , Band offsets
Journal title
Applied Surface Science
Serial Year
2010
Journal title
Applied Surface Science
Record number
1012988
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