Study of the switching phenomena of TlGaS2 single crystals

Single crystals of TlGaS2 were prepared by a special modified Bridgman technique and used to investigate the switching phenomena. The particular interest shown in switching studies of p-type TlGaS2 compound is associated with the possibility of its uses as an effective switching and memory elements in electronic devices. The switching effect observed in such crystal shows a memory character. Using a crystal holder and cryostat we measured the switching phenomenon at different ambient conditions such as temperature, light illumination as well as sample thickness. Pronounced parameters for switching for sample of thickness 0.17 cm were determined from the experimental data such as threshold voltage Vth = 400 V, threshold current Ith = 37 μA, holding voltage Vh = 350 V, holding current Ih = 42.3 × 10−4 A, threshold power Pth = 1.48 × 10−2 W, threshold field Eth = 196.429 V/cm as well as the ratio between the resistance in the off state ROFF to the resistance in the conducting state RON as 130.253. The factors affecting these parameters have also been investigated.