Title of article
Wetting process of electrolyte in high density Cu/Sn micro-bumps electrodepositing
Author/Authors
Jinglin Bi، نويسنده , , Huiqin Ling، نويسنده , , Anmin Hu، نويسنده , , Tao Hang، نويسنده , , Ming Li، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
3723
To page
3727
Abstract
Wetting process of electrolyte in high density Cu/Sn micro-bumps electrodepositing is reported in this paper. Three methods were adopted to enable electrolyte to permeate photo-etching micro-holes with high aspect ratio, including plasma treatment, adding wetting additive in electrolyte and mechanical action. Wettability of the samples with electrolyte was improved by the first two methods, according to contact angle and surface tension measurement. However, electrolyte still cannot reach up to the bottom of micro-hole. And then, electrolyte was subjected to mechanical action, including agitation and ultrasonic vibration. Under mechanical action, void free Cu/Sn micro-bumps fabrication was achieved in photo-etching micro-holes with depth of 60 μm and radius of 30 μm. At last, we proposed a model to show wetting process of electrolyte in photo-etching micro-holes.
Keywords
Wetting process , Void free Cu/Sn micro-bumps , Electrodepositing method
Journal title
Applied Surface Science
Serial Year
2011
Journal title
Applied Surface Science
Record number
1013884
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