Cu2ZnSnSe4 thin films prepared by selenization of co-electroplated Cu–Zn–Sn precursors

A novel technique for growth of high quality Cu2ZnSnSe4 (CZTSe) thin films is reported in our work. The CZTSe thin films were fabricated onto Mo layers by co-electroplating Cu–Zn–Sn precursors followed by annealing in the selenium vapors at the substrate temperature of 550 °C. The morphology and structure of CZTSe thin films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum, respectively. The results revealed that the single phase was in the CZTSe thin films, and the other impurities such as ZnSe and Cu2SnSe3 were not existed though they were difficult to distinguish both from EDS and XRD.