Influence of adhesion of silica and ceria abrasive nanoparticles on Chemical–Mechanical Planarization of silica surfaces

We report on a direct measurement of adhesion between abrasive nanoparticles of irregular shape, which are used in semiconductor industry in the process of Chemical–Mechanical Planarization (CMP), and silica surface. The adhesion of ceria and silica nanoparticles to silica surface is measured in multiple chemistries of different CMP slurries using a specially developed atomic force microscopy (AFM) method. Using this method, we study the influence of adhesion on the main parameters of CMP, removal rate and defectivity, scratches. While being plausible to expect correlation between these parameters and adhesion, it has not been systematically studied as of yet. We observed direct correlation between adhesion and removal rate. Comparing the measured defectivity and adhesion, we observe the presence of some correlation between these parameters. We conclude that both adhesion and shape of abrasive particles influence defectivity, micro-scratches. Direct measurements of the adhesion between abrasive nano-particles and surface can be used in the screening of new slurries as well as various modeling related to wearing of the surfaces.