Title of article
Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (0 0 1) InP substrate by MOCVD
Author/Authors
Benzhong Wang، نويسنده , , Soo-Jin Chua، نويسنده , , Zhijie Wang، نويسنده , , Yuzhou Gao and Shiyong Liu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
6
From page
290
To page
295
Abstract
In this paper, we present the effects of growth interruption on self-assembled InAs quantum dots (QDs), which were grown on a (0 0 1) InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). Large red shifts in the photoluminescence (PL) emission from the InAs QDs together with narrowing of the full-width at half-maximum (from 107 to 70 meV) of the PL are observed as a result of the growth interruption. Besides adatom migration, As/P exchange reaction during the interruption is demonstrated to play an important role in changing the optical properties of InAs/InP QDs.
Keywords
MOCVD , Photoluminescence , InAs/InP , Self-organized quantum dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044604
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