The mobility of charge carriers in a size-quantized coated semiconductor wire

Within the framework of a staircase infinitely deep potential well model, the mobility of charge carriers is calculated for scattering on impurity centers located on the axis of a size-quantized semiconducting coated wire. Calculations are done for the dielectric constant mismatch of the wire, coating and surrounding environment, taking into account the difference of the effective masses in the wire and coating. The effect of a longitudinal magnetic field on mobility is also considered. Numerical results are presented for the GaAs–Ga1−xAlxAs system at different values of the wire and coating radii, the alloy concentration x, and magnetic field.