GaN-based quantum dots

During the last few years efficient light emitting devices have been developed from UV to IR in the III-N system, opening up a very large application field. The problem with the present III-N emitters is the high defect (dislocation) density in the material produced to date. One approach to eliminate the influence of dislocations on light emitting structures is to use zero-dimensional quantum dot (QD) structures in the active part of the material. In this article, we will review the growth mode, methods and the types of III-N QDs achieved in the last few years and the applications of QDs in devices will be introduced finally.