Title of article
Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
Author/Authors
A.F.G Monte، نويسنده , , F.V. de Sales، نويسنده , , S.W. da Silva، نويسنده , , M.A.G. Soler، نويسنده , , J.M.R. Cruz، نويسنده , , P.C. Morais ، نويسنده , , M.J. da Silva، نويسنده , , A.A. Quivy، نويسنده , , J.R. Leite، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
122
To page
123
Abstract
The carrier dynamics in self-assembled InAs/GaAs quantum dots (QDs) has been investigated as a function of the lateral dot density. We investigated the influence of the QD density on the process of carrier transfer among the QDs. We have found evidence that potential barriers at the wetting layer and dot interfaces are responsible to decrease the carrier capture in low density QDs. This effect can be observed on the increased carrier transport.
Keywords
Potential barriers , Quantum dots , Energy transfer , Carrier diffusion
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044908
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