Title of article
Effect of ageing on the luminescence intensity and lifetime of porous silicon: roles of recombination centers
Author/Authors
Bui Huy، نويسنده , , Phi Hoa Binh، نويسنده , , Bui Quang Diep، نويسنده , , Phi Van Luong، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
134
To page
136
Abstract
Ageing effect on the photoluminescence spectra and lifetime of porous silicon are analyzed in a set of samples containing particles with various sizes. The ageing causes a pronounced increase in the intensity from the sample containing large particles, whereas it causes only a small increase for the sample containing smaller ones. The origin of this phenomenon is the difference in initial concentrations of non-radiative centers in the samples and their passivation in the air. The transition of emission mechanism from recombination between quantum confined states to recombination via radiative centers, as well as passivation levels, have no effect on the dependence of the decay rate on emission energy. The received results reveal strong correlation between particle size, intensity and decay rate during the ageing.
Keywords
Decay rate , Porous silicon , Passivation , Intensity
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1044921
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