Non-equilibrium electron transport in degenerate nitride heterostructures—dynamic screening effects

We show how dynamic screening effects on non-equilibrium electron transport can be incorporated in the case of electronically dense GaN-based quantum wells. The theory is based on the Boltzmann equation, leading to evaluations of the momentum relaxation time and, hence, the electron mobility in these heterostructures. We find that both screening and anti-screening effects are manifest as the electron density varies. However, anti-screening dominates over a wide range of densities, with screening commencing at densities appropriate for phonon–plasmon coupling.