Title of article
Influence of oxidation on the transport properties of IV–VI-thin films
Author/Authors
E.I Rogacheva، نويسنده , , T.V Tavrina، نويسنده , , O.N Nashchekina، نويسنده , , S.N Grigorov، نويسنده , , A. Yu. Sipatov، نويسنده , , V.V Volobuev، نويسنده , , M.S Dresselhaus، نويسنده , , G Dresselhaus، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
310
To page
312
Abstract
The effect of oxidation at room temperature on the thickness dependences of transport properties of IV–VI (PbS, PbSe, PbTe) thin films was studied. The effect of charge carrier concentration on the character of these dependences in n-PbTe thin films was detected. The regularities in the behavior of IV–VI thin films exposed to air were established. The experimental results are interpreted within the framework of models taking into consideration the presence of compensating acceptor states created by oxygen on the film surface.
Keywords
IV–VI epitaxial films , Kinetic properties , Oxidation , Thickness
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045052
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