• Title of article

    Temperature dependence of responsivity in quantum dot infrared photodetectors

  • Author/Authors

    S.E. Schacham، نويسنده , , G. Bahir، نويسنده , , E. Finkman، نويسنده , , F.H. Julien، نويسنده , , J. Brault، نويسنده , , M. Gendry، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    2
  • From page
    636
  • To page
    637
  • Abstract
    Photoconductive spectra of InAs quantum dots embedded within InAlAs barriers show several peaks, ranging from 4 to View the MathML source. The nature of these peaks differs, as indicated by their dependence on bias and on temperature. The long wavelength peak drops rapidly with temperature, while the first peak hardly changes up to View the MathML source. While the wide peak around View the MathML source depends linearly on bias, indicating a direct excitation into the quasi-continuum, the peak at View the MathML source increases super-linearly since the photocarriers are generated by a two-step process, excitation into a bound level followed by tunneling to the continuum. This explains the drop with temperature, since as the temperature increases more carriers relax from the excited state back to the ground level rather than tunneling into the continuum.
  • Keywords
    Quantum dot infrared photodetectors (QDIP) , Recombination dynamics
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2003
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1046239