A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices

We generalize a two-dimensional dynamic percolation model of dielectric breakdown of the SiO2 in metal-oxide-semiconductor capacitors to include the effect of device area and oxide defect concentration. The strategy allows for dielectric breakdown to start in several points (seeds) of the Si/SiO2 interface. The results which arise for the behavior of the time to dielectric breakdown (tBD) with area, and the effect of the number of seeds (defects) at the interface allow for an improved agreement with experimental results.