Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures

The optical properties of Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structure (PHEMTs) are estimated after the process of rapid thermal annealing (RTA) in the temperature range 500–750°C. After layer intermixing and decrease of 2DEG densities of PHEMTs just occurs around the annealing temperature of 650°C, the 12H transition peak at View the MathML source above the annealing temperature of 650°C is newly observed from the photoluminescence (PL) and photoreflectance (PR) spectra. From the results of PL and PR measurements in the annealed PHEMTs, it is found that remarkable modification of band profile in InGaAs QW occur at annealing temperature above 650°C.