Hot electron energy loss rates in GaAs/GaAlAs multiple quantum wells: effects of finite barrier height and well width

Hot electron energy loss rate has been studied in GaAs/GaAlAs multiple quantum wells in the electron temperature range 3.3–View the MathML source where electron–acoustic phonon interaction dominates. Calculations are presented for power loss by incorporating the finite barrier height and screened interaction. An excellent agreement between our calculations and the experimental data of Celik et al. [Semicond. Sci. Technol. 17 (2002) 18] and Cankurtaran et al. [Phys. Stat. Sol. (b) 229 (2002) 1191] for quantum wells with widths in the range 51–View the MathML source and base lattice temperature in the range 1.7–View the MathML source is obtained. The analysis of the data, apart from demonstrating the importance of finite barrier height, has also brought out the relative importance of the contribution to power loss due to deformation potential and piezoelectric scatterings. The values deduced for the deformation potential constant Ed lie in the range 7.5–View the MathML source, in contrast to the large scatter in its values, usually observed in the literature. The need for more experimental data, for well widths less than View the MathML source and higher than View the MathML source, is pointed out for a better understanding of well width dependence of electron energy loss rate.