Title of article
Crystalline boron oxide nanowires on silicon substrate
Author/Authors
Qing Yang، نويسنده , , Jian Sha، نويسنده , , Lei Wang، نويسنده , , Yu Zou، نويسنده , , Junjie Niu، نويسنده , , Can Cui، نويسنده , , Deren Yang، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
6
From page
319
To page
324
Abstract
Crystalline boron oxide nanowires have been synthesized on silicon substrates by chemical vapor deposition (CVD) process without the use of catalysts or templates. It is pointed out that the boron oxide nanowires are cubic and single crystalline, and the diameter of the nanowires is in the range of 20–View the MathML source. Some of the nanowires branched, and the diameters of the branches and stems of the branched boron oxide nanowires are in the range of 20–80 and 100–View the MathML source, respectively. The crystallinity, morphology, and structure features of the as-prepared boron oxide nanowires were investigated by field emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and selected area electron diffraction. Furthermore, Raman spectrum and Fourier transform infrared spectroscopy of the nanowires were also investigated.
Keywords
Nanowires , CVD , B2O3
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046392
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