Title of article
A study on carbon nanotube bridge as a electromechanical memory device
Author/Authors
Jeong Won Kang، نويسنده , , Jun Ha Lee، نويسنده , , Hoong Joo Lee، نويسنده , , Ho Jung Hwang، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
9
From page
332
To page
340
Abstract
A nanoelectromechanical (NEM) nanotube random access memory (NRAM) device based on carbon nanotube (CNT) was investigated using atomistic simulations. For the CNT-based NEM memory, the mechanical properties of the CNT-bridge and van der Waals interactions between the CNT-bridge and substrate were very important. The critical amplitude of the CNT-bridge was 16% of the length of the CNT-bridge. As molecular dynamics time increased, the CNT-bridge went to the steady state under the electrostatic force with the damping of the potential and the kinetic energies of the CNT-bridge. The interatomic interaction between the CNT-bridge and substrate, value of the CNT-bridge slack, and damping rate of the CNT-bridge were very important for the operation of the NEM memory device as a nonvolatile memory.
Keywords
Nanoelectromechanical memory , Carbon nanotube , Atomistic simulation , molecular dynamics simulation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046394
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