Electromechanical modeling and simulations of nanobridge memory device

A carbon-nanotube (CNT)-bridge nanoelectromechanical memory device was investigated by using two-dimensional model based on electrostatic and elastostatic theories. The nanotube-bridge memory device was operated by the electrostatic, the elastostatic, and the vdW forces acting on the CNT-bridge. The vdW interactions between the nanotube-bridge and the oxide were very important for nonvolatile nanotube-bridge memory device. Our simulation results have showed that the nonvolatility of the nanotube-bridge memory device could be increased by the long nanotube-bridge, the short distance between the nanotube-bridge and the oxide surface, and the strong vdW interactions. When the materials composed of the oxide film were different, since the vdW interactions must be also different, the oxide materials should be carefully selected to order that the CNT-bridge memory device could be worked as a nonvolatile memory.