Title of article
A novel method for positioning of InAs islands on GaAs (1 1 0)
Author/Authors
C.X. Cui، نويسنده , , Y.H. Chen، نويسنده , , Janet C.L. Zhang، نويسنده , , P. Jin، نويسنده , , G.X. Shi، نويسنده , , Robert C.H. Zhao، نويسنده , , B. Xu، نويسنده , , Z.G. WANG، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
8
From page
537
To page
544
Abstract
A novel method for positioning of InAs islands on GaAs (1 1 0) by cleaved edge overgrowth is reported. The first growth sample contains strained InxGa1−xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopatternʹs effect is studied by the different indium fraction of SL and MBE growth conditions.
Keywords
InAs island , GaAs (1 1 0) , Cleaved edge overgrowth , InGaAs/GaAs superlattice , MBE
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046500
Link To Document