Coupled parallel quantum dots in silicon-on-insulator metal-oxide-semiconductor field-effect transistors

We report the peak splitting and beating of Coulomb blockade oscillation in a gate-induced Si quantum dot incorporated into silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The formation of double tunnel-coupled quantum dots is originated from the three-dimensional field effects in silicon-on-insulator nanowires. Beating of both the maximum and the minimum conductance is distinguished from those of many previously reported series tunnel-coupled quantum dot systems fabricated in a GaAs/AlGaAs heterostructure, and the reason for the discrepancy, the formation of parallel double tunnel-coupled quantum dots, is confirmed by a numerical simulation.