Effects of Rashba spin–orbit interaction on spin-dependent resonant tunneling in ZnSe/Zn1−xMnxSe multilayer heterostructures

We investigate the effects of external electric field-induced Rashba spin–orbit interaction (SOI) on the spin-dependent resonant tunneling through ZnSe/Zn1−xMnxSe heterostructure with double paramagnetic layers in the presence of a magnetic field. Our investigations show a four-fold enhancement of the polarization of the spin-dependent current densities due to the electric field-induced Rashba SOI. These features could be used in the design and fabrication of spin-dependent microelectronic and optoelectronic devices.