An analysis on synthesizing large scales of one-dimensional silicon nano-structures by simple evaporation of sulfur-contained powders

The growth mechanism for synthesizing large scales of one-dimensional silicon nano-structures (silicon nano-wires (SiNWs) or silicon oxide nano-wires (SiO2-NWs)) by a simple evaporation of sulfur-contained powders on silicon wafer is discussed. A novel sulfide-assisted mechanism referring to oxygen-assisted mechanism is proposed. Amongst this simple method, sulfide or pure sulfur can both assist the formation of SiNWs. The growth is fast and some SiNWs are easily oxidized to be amorphous structure of SiO2-NWs under the low-vacuum system. The simple method suggests a useful route to achieve plenty of one-dimensional silicon nano-structures for further research.