Title of article
Temperature dependence of surface quantum dots grown under frequent growth interruption
Author/Authors
L.K. Yu، نويسنده , , B. Xu، نويسنده , , Z.G. WANG، نويسنده , , P. Jin، نويسنده , , C. Zhao، نويسنده , , W. Lei، نويسنده , , J. Sun، نويسنده , , L.J. Hu، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2007
Pages
4
From page
503
To page
506
Abstract
We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a “group coupling” model put forward by us.
PACS
Keywords
Growth interruption , In segregation , Photoluminescence , Molecular beam epitaxy , Quantum dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2007
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046869
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