The binding energy of hydrogenic impurity in multilayered spherical quantum dot

The binding energy of a hydrogenic impurity of a multilayered spherical GaAs-(Ga,Al)As quantum dot has been investigated as a function of the barrier thickness and the inner dot thickness for various barrier potentials in the effect of the band non-parabolicity. Within the effective mass approximation, the ground state energy has been calculated using the fourth-order Runge–Kutta method. The ground state binding energy of hydrogenic impurity located at the center of a quantum dot has been studied with a variational approach. We have found that a variation in the binding energy has depended on the geometry of the dot.