Title of article
Scattering mechanisms and Boltzmann transport in graphene
Author/Authors
Shaffique Adam، نويسنده , , E.H. Hwang، نويسنده , , S. Das Sarma، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
4
From page
1022
To page
1025
Abstract
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the random phase approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, σ∼nβ, where β=1,0,-2 for Coulomb, short-range and surface roughness, respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.
Keywords
Boltzmann transport , Graphene , Ripples
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046961
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