• Title of article

    Temperature dependence of the quantum Hall effect in graphene

  • Author/Authors

    A.J.M. Giesbers، نويسنده , , U. Zeitler، نويسنده , , M.I. Katsnelson، نويسنده , , L.A. Ponomarenko، نويسنده , , T.M.G. Mohiuddin، نويسنده , , J.C. Maan، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    3
  • From page
    1089
  • To page
    1091
  • Abstract
    We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν=6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν=±2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and View the MathML source it approaches the theoretical gap for very sharp Landau levels.
  • Keywords
    Graphene , Activation gaps , Quantum Hall effect
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2008
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1046982