Title of article
Emergence of a reentrant insulating phase around image in a series of GaAs/AlGaAs quantum wells with varying well widths
Author/Authors
D.R. Luhman، نويسنده , , W. Li، نويسنده , , T.M. Lu، نويسنده , , D.C. Tsui، نويسنده , , L.N Pfeiffer، نويسنده , , K.W West، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
1504
To page
1506
Abstract
We report on magneto-transport measurements of a systematic set of five GaAs/AlGaAs quantum wells with well widths ranging from 7.9 to 33.0 nm. We find that as L is decreased into the regime where the zero-field mobility is limited due to surface roughness, a reentrant insulating phase around filling fraction View the MathML source emerges. As L is decreased further, only a single insulating phase is observed for ν<1.
Keywords
Narrow quantum wells , Reentrant insulating phases , Quantum Hall effect
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047118
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