Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (3 1 1)A GaAs substrates

Mobilities of electrons and holes in a set of thin (3 1 1)A GaAs quantum wells (QWs) are investigated with focus on their in-plane anisotropies to clarify the roles of anisotropies in interface roughness and hole masses View the MathML source. The roughness is modeled with a Gaussian-type autocorrelation function, characterized by an average height Δ and two correlation lengths Λ∥ and Λ⊥ along the [2¯ 3 3] and [0 1 1¯] axes. By analyzing electron mobilities μe in an 8-nm-thick n-type QW, Λ∥ and Λ⊥ were determined to be 18 and 12 nm. Hole mobilities μh in a 5-nm-thick p-type QW were measured and interpreted fairly well by a theoretical calculation in which Λ∥, Λ⊥ and Δ obtained earlier were used.