Title of article
Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Author/Authors
Yasunori Kobayashi، نويسنده , , Masayasu Fukui، نويسنده , , Junichi Motohisa، نويسنده , , Takashi Fukui، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
2204
To page
2206
Abstract
We have investigated the optical properties of single InP nanowires (NWs) grown by selective-area metalorganic vapor phase epitaxy. Systematic measurements on several single NWs revealed that some of they exhibited good optical quality at low temperature. Band gap energy of InP NWs with wurtzite crystal structure was found to be larger by about 88 meV than that of zincblende InP, in good agreement with theoretical prediction.
Keywords
Nanowires , MOVPE , Photoluminescence , InP
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047337
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