Hot-electron transport properties of CoFe/n-Si and CoFe/Cu/n-Si junctions

The hot-electron transport properties of different thickness of CoFe films deposited on n-Si substrate with and without Cu layer were investigated. Diode characteristics were tested to obtain the heights of Schottky barrier for different samples. The dependences of Schottky heights on CoFe thickness were studied. The research shows that the height of the Schottky barrier can be adjusted and a good Schottky diode can be obtained by controlling the thickness of CoFe film accurately. The results are very important for the application of spintronic devices, such as spin valve transistor (SVT) and magnetic tunnel transistor (MTT).