Title of article
Catalytic growth of boron nitride nanotubes using gas precursors
Author/Authors
L. Guo، نويسنده , , H.V. Singh and R.N. Singh، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
6
From page
448
To page
453
Abstract
Hexagonal boron nitride nanotubes (BNNTs) are synthesized at low substrate temperatures on nickel (Ni)- or cobalt (Co)-coated oxidized Si (1 1 1) wafers in a microwave plasma-enhanced chemical vapor deposition (MPCVD) system by decomposition and reaction of gas mixtures consisting of B2H6–NH3–H2. The growth of one-dimensional (1-D) BN nanostructures is obtained at an optimum combination of catalyst film thickness, substrate temperature, and precursor gas flow rates. The morphology, composition and structural properties of the BNNTs are analyzed by scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (EDX), selected area diffraction (SAD), and Raman spectroscopy. The patterned growth of BNNTs is also demonstrated.
Keywords
Catalyst , Low temperature , Boron nitride nanotubes (BNNTs) , Chemical vapor deposition (CVD) , Plasma
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047607
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