A study on a two-step technique of growing Ga2O3/ZnO films ammoniated at different temperatures

ZnO films are firstly prepared on Si substrates by pulsed laser deposition (PLD) technique and then the Ga2O3 films are deposited on ZnO/Si substrates by magnetron sputtering system. The low-dimensional GaN nanostructured materials are obtained by ammoniating the Ga2O3/ZnO films from 850 to 1000 °C for 15 min in a quartz tube. X-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrophotometer (FTIR) and photoluminescence (PL) are used to analyze the structure, morphology and optical properties of as-grown samples. The results show that their properties are investigated particularly as a function of ammoniating temperatures. Large quantities of high-quality GaN nanowires are successfully fabricated at 900 °C with lengths of about tens of micrometers and diameters ranging from 30 to 120 nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. Finally, the growth mechanism is also briefly discussed.