Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects

In the recent past, vertical surrounding gate (VSG) MOSFETs have gained importance since defining their nanoscale channel length no longer depends on lithographic limitations and since they can lead to high packing densities. However, as the channel lengths decrease below 100 nm, VSG MOSFETs too suffer from short-channel effects due to the coupling between the drain and source side charges. In this paper, we demonstrate that using a recessed source, the short-channel effects in nanoscale VSG MOSFETs can be effectively controlled.