Title of article
Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm
Author/Authors
M. Casalino، نويسنده , , L. Sirleto، نويسنده , , L. Moretti، نويسنده , , M. Gioffrè، نويسنده , , G. Coppola، نويسنده , , M. Iodice، نويسنده , , I. Rendina، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
5
From page
1097
To page
1101
Abstract
In this paper a novel photodetector at 1550 nm, working at room temperature and completely silicon compatible, is reported. The detector is a resonant cavity-enhanced structure incorporating a Schottky diode back-illuminated and its working principle is based on the internal photoemission effect. The device performances in terms of responsivity are numerically calculated for different values of bottom reflectivity. Finally, a preliminary device was realized and characterized in order to validate the theoretical results.
Keywords
Photodetectors , Resonant cavity enhanced , Internal photoemission , Fabry–Perot , Silicon
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047743
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