Junction characteristics of pulsed laser deposition grown Gd2O3 on p-silicon

Thin film of gadolinium oxide (Gd2O3) is grown on p-silicon using pulsed laser deposition technique. The current–voltage characteristics of the device show non-linear behavior. The values of various junction parameters such as ideality factor, barrier height and series resistance are determined using different techniques. There is a good agreement between the junction parameters obtained from these methods. The ideality factor and barrier height is estimated to be 2.26 and 0.33 eV, respectively.