Title of article
Magneto- and electroabsorption in narrow-gap InSb cylindrical layer quantum dot
Author/Authors
Marwan Zuhair، نويسنده , , Aram Manaselyan، نويسنده , , Hayk Sarkisyan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
8
From page
1583
To page
1590
Abstract
For the regime of strong size quantization, we perform theoretical investigation of electronic states and interband dipole transition in a narrow-gap InSb cylindrical layer quantum dot under the influence of both magnetic and electric field. The energy for the system under consideration is proportional to the magnetic field under square root, unlike the case of parabolic dispersion law. We consider the transition from the light hole and heavy hole states to the electron state of conduction band. In the plane of quantum dot cross section, the electronic states were approximated with the two-dimensional rotator model. The interband absorption coefficient and threshold frequencies for different electric field orientation in the presence of magnetic field were calculated and the selection rules are found. It is found that the electric field changes the selection rules.
Keywords
Quantum dot , Narrow-gap semiconductor , Electroabsorption
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047838
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