Title of article
Photo-excited carriers and optical conductance and transmission in graphene in the presence of phonon scattering
Author/Authors
H.M. Dong، نويسنده , , W. Xu، نويسنده , , J. Zhang، نويسنده , , F.M. Peeters، نويسنده , , P. Vasilopoulos، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2009
Pages
3
From page
748
To page
750
Abstract
We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron–photon–phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (View the MathML source), the universal optical conductance σ0=e2/4ℏ is obtained and the light transmittance is about 0.97–0.98. Interestingly, there is an optical absorption window in the range View the MathML source which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors.
Keywords
Graphene , Photon-excited carriers , Optical conductance , Optic phonon
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2009
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1048033
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