• Title of article

    Photo-excited carriers and optical conductance and transmission in graphene in the presence of phonon scattering

  • Author/Authors

    H.M. Dong، نويسنده , , W. Xu، نويسنده , , J. Zhang، نويسنده , , F.M. Peeters، نويسنده , , P. Vasilopoulos، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2009
  • Pages
    3
  • From page
    748
  • To page
    750
  • Abstract
    We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron–photon–phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (View the MathML source), the universal optical conductance σ0=e2/4ℏ is obtained and the light transmittance is about 0.97–0.98. Interestingly, there is an optical absorption window in the range View the MathML source which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors.
  • Keywords
    Graphene , Photon-excited carriers , Optical conductance , Optic phonon
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2009
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1048033