The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell

We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a p–i–n structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and current–voltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration.