• Title of article

    Equilibrium critical size of coherent InSb/GaSb quantum dot

  • Author/Authors

    Han Ye، نويسنده , , Pengfei Lu، نويسنده , , Zhongyuan Yu، نويسنده , , Boyong Jia، نويسنده , , Hao Feng، نويسنده , , Yumin Liu، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2009
  • Pages
    4
  • From page
    2402
  • To page
    2405
  • Abstract
    We present a finite element method to simulate the strain field in InSb/GaSb quantum dots in the framework of anisotropic elasticity, before and after the onset of plastic relaxation. Taking the interaction between dislocation and free surface into consideration, the model directly calculates the residual strain in the dislocated system. Based on the energy balance between the two isolated states, the equilibrium critical size is determined. In the criterion, only the non-elastic dislocation core energy should be considered separately. The results are in satisfactory agreement with experimental data.
  • Keywords
    InSb/GaSb quantum dot , Residual strain , Equilibrium critical size , Finite element method
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2009
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1048357