Controllable Dresselhaus field in microscopically inversion-symmetric quantum wells

We have investigated theoretically a method to control the Dresselhaus effective magnetic field, using crystallographically inversion-symmetric quantum wells, whose well layer consists of a compound semiconductor and a thin Ge layer at the centre of the well. The Dresselhaus field vanishes, because of the inversion symmetry of the crystal structure, and is induced by electric field applied perpendicular to the well. Sps* tight-binding calculation shows that the Dresselhaus field is proportional to the applied electric field, and is comparable to the Rashba field for wells with appropriate width. As a result, we can externally control the strength of the total effective magnetic field without changing its shape.