Two-phases epitaxial growth of erbium silicide on Si (1 0 0)

During the growth of erbium silicide on a Si (1 0 0) substrate the exceptional growth of a trapezoid inclusion in the substrate was observed by electron microscopy. It is found that in the inclusion a strained hexagonal silicide was grown, although the silicide overlayer grows with the tetragonal type of structure. Very good epitaxial relationships between the two silicides, as well as with the Si substrate are deduced. All the interfaces between the three structures are rather well defined.