Effect of uniaxial strain on the subthreshold swing of ballistic carbon nanotube FETs

In this paper, using the non-equilibrium Greenʹs function formalism (NEGF), i have investigated the effect of uniaxial strain on the subthreshold swing of the Tunneling and Schottky barrier carbon nanotube FETs. By a qualitative description of the quantum capacitance of the structures, i have shown that the uniaxial strain has strong effect on the subthreshold swing. The minimum voltage swing to obtain a given ION/IOFF ratio has also been investigated. The results show that, a smaller voltage swing and subthreshold swing can be obtained using a higher value of the uniaxial strain. Although a simultaneous decrease in the ON current and increase in the delay time also occurs. Hence, whenever the power consumption is the main purpose of the design, uniaxial strain can be used to achieve a very low voltage swing value.