Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires under hydrostatic pressure

Within the framework of effective-mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InxGa1−xN/GaN cylindrical quantum well wires (CQWWs) is investigated using variational procedures. Numerical results show that the ground-state donor binding energy Eb increases when the hydrostatic pressure increases for any impurity position. The donor binding energy for a shallow donor impurity located at the center of the CQWWs is the largest. Also, we have found that In concentration is very important value to tailor the system, since the binding energies close to binding energy maxima are strongly dependent to In content.