The effect of the intense laser field on the intersubband transitions in Ga1−xInxNyAs1−y/GaAs single quantum well

The effect of the intense laser field on the intersubband optical absorption for (1–2) transition in a Ga1−xInxNyAs1−y/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical calculations are performed in the effective-mass approximation. We have found that the increase of the nitrogen and indium concentrations with intense laser field leads to important effects on the optical properties of a quantum well. The obtained results show that the desired energy range corresponding to the subbands may be tuned by changing the laser intensity and the nitrogen and indium concentrations. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors.