Title of article
The mechanism of spontaneous doping of boron atoms into graphene
Author/Authors
Xiaohui Deng، نويسنده , , Dengyu Zhang، نويسنده , , Mingsen Deng، نويسنده , , Xilong Qu، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
5
From page
2016
To page
2020
Abstract
The mechanism of spontaneous doping of boron atoms into graphene is proposed from ab-initio calculations. When boron and oxygen atoms are placed beside the graphene plane, boron can substitute spontaneously carbon atom in graphene without any energy barrier. More interestingly, the mechanism of spontaneous boron doping is reversible, i.e., the boron dopant also can be removed by the similar barrier-free process. Therefore, the mechanism of doping and contra-doping in this paper should be very useful to control boron doping of graphene.
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2012
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049050
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