• Title of article

    The mechanism of spontaneous doping of boron atoms into graphene

  • Author/Authors

    Xiaohui Deng، نويسنده , , Dengyu Zhang، نويسنده , , Mingsen Deng، نويسنده , , Xilong Qu، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    2016
  • To page
    2020
  • Abstract
    The mechanism of spontaneous doping of boron atoms into graphene is proposed from ab-initio calculations. When boron and oxygen atoms are placed beside the graphene plane, boron can substitute spontaneously carbon atom in graphene without any energy barrier. More interestingly, the mechanism of spontaneous boron doping is reversible, i.e., the boron dopant also can be removed by the similar barrier-free process. Therefore, the mechanism of doping and contra-doping in this paper should be very useful to control boron doping of graphene.
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2012
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1049050