Tunnel magnetoresistance of Cn−2X2 (n=60, 70; X=N, B) molecular bridge

Spin-coherent quantum transport in the Cn−2X2 (n=60, 70; X=N, B) molecular junctions was investigated using the Non-equilibrium Greenʹs function method. The I–V characteristics and the bias and gate dependence of TMR were calculated using the tunneling theory. The results have indicated that the effect of doped atoms is dramatic on the I–V characteristics and the bias and gate dependence of TMR on the Cn molecular junctions. Also, the positive and negative TMR ratio greater than 100% is observed in the C70 molecular junctions.